基于相位切趾調制的非對稱結構光柵濾波器設計與制備

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中圖分類號： TN256 文獻標志碼：A

Design and fabrication of asymmetric grating filter based on phase apodization modulation

JIANG Wei， YUAN Shuo，YU Zhiheng，YANG Cunliang，REN Wenbo，XIA Xincheng， WANG Zhengjie， FENG Jijun （SchooolofOptical-Electricaland Computer Enginering，Universityof Shanghai forScienceand Technology，Shanghai 200093，China）

Abstract： In this work， phase apodized silicon Bragg grating filters with varying sidewall ridge width and location were investigated， while the resonance wavelength， extinction ratio and rejection bandwidth could be tuned flexibly. The grating filters with a waveguide width of 500nm and grating period of 400nm were fabricated and characterized for a proof of concept. The resonance wavelength of the device could be shifted by 4.54nm with varying the sidewall ridge width from 150 to 250nm . The corresponding rejection bandwidth could be tuned from 1.19 to 2.03nm by applying a sidewall ridge location offset from 50 to 200nm . The experimental performances coincide well with the simulation results. The presented sidewal ridge modulated apodized grating filter can be expected to have great application prospects for optical communications and semiconductorlasers.

Keywords： apodized Bragg grating; sidewall ridge; grating filter; silicon photonics

引言

基于絕緣體上硅（silicon-on-insulator，SOI）的集成光子器件因其制造工藝與互補金屬氧化物半導體（complementary metal oxide semiconductor，CMOS）具有兼容性，同時對光場具有強限制性且結構緊湊，近年來引起了廣泛關注[-3]。（剩余9488字）