基于boost效應(yīng)的XRAM電路研究

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中圖分類號：TN782 文獻(xiàn)標(biāo)志碼：A

Research on XRAM circuit based on boost effect

JIANG Song1， CAI Mengmeng1，RAO Junfeng2 （1.SchooofechanicalEngineering，Universityofanghaiforcienceandechnologyhanghaio3，China;2.uzou Institute of Biomedical Engineering and Technology， Chinese Academy of Sciences，Suzhou 215l63，China）

Abstract： Inductive energy storage pulse power supply has a wide range of applications in the field of pulsed magnetic field， in which the XRAM circuit utilizing multi-stage inductors in series charging and parallel discharging is more expandable. An XRAM circuit using MOSFET switches and capacitor boost effect to increase the current magnitude was proposed. The structure was simple and easy for modular design. The circuit could generate high-current pulses and pulsed magnetic fields without a high-voltage DC source. Based on the topology， two two-stage XRAM circuits in paralll are constructed， which can generate 0～150A pulse current with frequency of 10～100Hz and pulse width of 0～2 ms on a 10μH inductive load， with only 24V DC supply voltage. It can generate a pulse magnetic field of up to 0.125T. ， which verifies the feasibility of the scheme. Circuit simulations verify the current boost effect of the capacitor， and compare the current boost effect with different charging times. A stronger pulsed magnetic field can be obtained by increasing the number of parallel branches.

Keywords： XRAM circuit; inductive energy storage; pulse current; pulse magnetic field

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